Dynamic Characterization and Noise Analysis of 4 H-SiC Impatt Diode at Ka Band


The microwave as well as the small signal noise properties on a one dimensional n+npp+ DDR structure 4H-SiC IMPATT Diode have been studied using advanced computer simulation program developed by us and compared at different frequency of Ka band by taking the area of the diode as 8 2 10 m . Also the theory for the diode current noise associated with the electron hole pair generation and recombination in the space charge region of the diode is presented. This paper can help to know about the small signal behavior as well as noise behavior of IMPATT diode along with power density at the Ka band and will be helpful for designing the 4H-SiC based IMPATT diode depending upon the microwave applications.


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